elektronische bauelemente STB1277 -2a , -30v pnp plastic encapsulated transistor 08-may-2013 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 3 base 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features general purpose switching and amplification. high total power dissipation. high h fe and good linearity classification of h fe product-rank STB1277-o STB1277-y range 100~200 160~320 absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -30 v collector to emitter voltage v ceo -30 v emitter to base voltage v ebo -5 v collector current - continuous i c -2 a collector power dissipation p c 0.625 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo -30 - - v i c = -0.1ma, i e =0 collector to emitter breakdown voltage v (br)ceo -30 - - v i c = -1ma, i b =0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -1ma, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -30v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -5v, i c =0 dc current gain h fe 100 - 320 v ce = -2v, i c = -500ma collector to emitter saturation voltage v ce(sat) - - -0.8 v i c = -2a, i b = -0.2a base to emitter saturation voltage v be(sat) - - -1 v i c = -500ma, v ce = -2v transition frequency f t - 170 - mhz v ce = -5v, i c = -50ma collector output capacitance c ob - 48 - pf v cb = -10v, i e =0, f=1mhz to - 92 1 11 1 emitter 2 22 2 collector 3 33 3 base millimeter millimeter ref. min. max. ref. min. max. a 4.40 4.70 f 0.30 0.51 b 4.30 4.70 g 1.27 typ. c 12.70 - h 1. 10 1.40 d 3.30 3.81 j 2.42 2.66 e 0.36 0.56 k 0.36 0.76
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